Artificial Synaptic Device and Chaotic Oscillator Implementation Using a Novel Floating Memtranstor Emulator

Abstract

The memtranstor is a memory element that establishes a direct relationship between charge and magnetic flux through nonlinear magnetic effects and is classified as the fourth memory element after the memristor, memcapacitor, and meminductor. This paper discusses the design of a floating emulator integrating a newly introduced memory element called memtranstor. The proposed memtranstor circuit employs four differential voltage current conveyors (DVCCs), one analog multiplier, three grounded capacitors, and four grounded resistors. The PSPICE simulation results are done using the 0.18-mu m CMOS technology parameter to confirm the functionality of the suggested floating emulator circuit. By altering the parameters in the models, a variety of simulations are done including memory effect simulations, Monte Carlo simulations, pinched hysteresis loops using various DC control voltages and frequencies, temperature variation, and output voltage noise simulations. To demonstrate the potential applications of the proposed memtranstor, its artificial synaptic plasticity and its role in a memtranstor-based chaotic oscillator are validated through example simulations.