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ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE

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dc.contributor.authorBozkurt, Kutsal
dc.date.accessioned2026-06-27T13:54:17Z
dc.date.issued2016
dc.description.abstractMBE (Molecular Beam Epitaxy) grown p-i-n laser heterostructure, based on InAs/InP Quantum Dashes with quaternary InGaAsP Quantum Well, were investigated through electroluminescence (EL) measurements. Bipolar injection set on just of forward bias, V-F, 1.3 V, resulting an emission of long wavelength laser light, peaking of 1550 nm. This value was consistent with thermal energy band gap, deduced from current-voltage measurement in space charge limited regime where mobility of injected carriers followed Poole-Frenkel type conduction.en
dc.identifier.eissn1304-7191
dc.identifier.endpage259
dc.identifier.issn1304-7205
dc.identifier.issue2
dc.identifier.startpage255
dc.identifier.urihttps://hdl.handle.net/20.500.14981/55516
dc.identifier.volume34
dc.identifier.wos000379848700011
dc.language.isoeng
dc.publisherYILDIZ TECHNICAL UNIV
dc.relation.ispartofSIGMA JOURNAL OF ENGINEERING AND NATURAL SCIENCES-SIGMA MUHENDISLIK VE FEN BILIMLERI DERGISI
dc.subjectEL
dc.subjectquantum dashes
dc.subjectannihilation
dc.subjectEngineering
dc.titleELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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