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Effect of Na doping and heat treatment on the characteristics of ZnO thin films and ZnO/Si cells

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dc.contributor.authorYesilkaya, S. Serkis
dc.contributor.authorAlqader, Huda M. Abd
dc.date.accessioned2026-06-27T14:41:16Z
dc.date.issued2022
dc.description.abstractUndoped and sodium doped ZnO thin films were grown on glass and Si substrates by spray pyrolysis. Post thermal annealing was applied for 1 h at 350 degrees C. Effect of Na doping and thermal annealing on the properties of ZnO thin films were investigated via XRD, UV-Visible spectrometry and resistivity measurements. Resistivity of the Na doped and annealed ZnO film was decreased to 7.15x10(3) Omega.cm from 3.26x10(4) Omega.cm where band gap energy was decreased to 3.31 eV from 3.36 eV. Current-voltage measurements held for all ZnO/Si heterostructures in dark and under illumination and device parameters were determined. Again best result obtained for the device in which both Na doping and annealing were applied as efficiency was increased to 4.57% from 2.01%.en
dc.description.sponsorshipYildiz Technical University Scientific Research Project Coordination Department [FDK-20213754]
dc.description.urihttps://doi.org/10.1016/j.matlet.2022.133118
dc.identifier.doi10.1016/j.matlet.2022.133118
dc.identifier.eissn1873-4979
dc.identifier.issn0167-577X
dc.identifier.urihttps://hdl.handle.net/20.500.14981/63527
dc.identifier.volume328
dc.identifier.wos000888817500003
dc.language.isoeng
dc.publisherELSEVIER
dc.relation.ispartofMATERIALS LETTERS
dc.subjectZnO
dc.subjectThin films
dc.subjectNa doping
dc.subjectSemiconductors
dc.subjectHeterojunctions
dc.subjectDOPED ZNO
dc.subjectAL
dc.subjectMaterials Science
dc.subjectPhysics
dc.titleEffect of Na doping and heat treatment on the characteristics of ZnO thin films and ZnO/Si cells
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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