Examining the Optimal Use of WBG Devices in Induction Cookers

Abstract

Modern induction cookers have started to demand challenging features such as slim design, high power ratings, high performance, and silence. All those requirements are directly related to the power semiconductors used in power converters. Si (silicon)-based power semiconductors are not capable of answering those demands because of strict operating conditions, such as high ambient temperatures. Therefore, WBG (Wide Band Gap) power semiconductors have been getting attention. In this study, WBG power semiconductors will be compared with Si-based IGBT (Insulated Gate Bipolar Transistor) under different operating conditions. The best option to use WBG power semiconductors in modern induction cookers will be analyzed. The performance of a series-resonant half-bridge converter was evaluated under various operating conditions. Measurements were obtained from the real operating conditions of induction hobs. The switching frequency is changed from 20 kHz to 100 kHz, while the power rating is increased to 3.7 kW. In addition to traditional 4-zone induction cooktops, this discussion also provides a comprehensive analysis of high-segment, fully flexible induction cooktops. While the IGBT-based design exhibits 25.79 W power loss per device, the WBG device exhibits 6.87 W in the maximum power condition of conventional induction cooker operation. When it comes to high-frequency operation, the WBG power device exhibits 10.05 W at 95 kHz. Total power loss is still well below that of the IGBT-based conventional design. Appropriate usage of WBG power semiconductors in modern induction cookers can exploit many more benefits than Si-based designs.