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Signal-noise neural network model for active microwave devices

dc.contributor.authorGunes, F
dc.contributor.authorGurgen, F
dc.contributor.authorTorpi, H
dc.contributor.institutionauthorTORPİ, Hamid
dc.date.accessioned2026-06-27T12:58:25Z
dc.date.issued1996
dc.description.abstractA new method for concurrently modelling the small-signal and the noise performance of active microwave devices is proposed. Here, the device is modelled by a black box whose small signal and noise parameters are evaluated through a neural network, based upon the fitting of both of these parameters over the operational bandwidth of the device. On using the concurrent modelling procedure, it has been found that, not only can the small-signal performance be simulated accurately, but also the prediction of noise performance is in much better agreement with measurements than those of recent published models.en
dc.description.urihttps://doi.org/10.1049/ip-cds:19960150
dc.identifier.doi10.1049/ip-cds:19960150
dc.identifier.endpage8
dc.identifier.issn1350-2409
dc.identifier.issue1
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/20.500.14981/48390
dc.identifier.volume143
dc.identifier.wosA1996TX12200001
dc.language.isoeng
dc.publisherIEE-INST ELEC ENG
dc.relation.ispartofIEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS
dc.subjectneural network
dc.subjectmicrowave devices
dc.subjectEQUIVALENT-CIRCUIT
dc.subjectGAAS-FET
dc.subjectDESIGN
dc.subjectEngineering
dc.titleSignal-noise neural network model for active microwave devices
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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