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Manipulation of magnetic anisotropy by voltage induced strain in Co2MnAl/PMN-PT heterostructure

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dc.contributor.authorOzdemir, O.
dc.contributor.authorAltindal, A.
dc.contributor.authorArslan, L. Colakerol
dc.date.accessioned2026-06-27T14:41:22Z
dc.date.issued2022
dc.description.abstractWe have investigated the effect of an external electric field on the magnetic properties of Co2MnAl thin films deposited on a lead magnesium niobate-lead titanate (PMN-PT) (011) substrate. Stain-induced magnetoelectric coupling affects the magnetic properties of the Co2MnAl/PMN-PT system. The piezo-strain induced by applying an external field normal to the surface induces only in-plane strain, which leads to the rotation of easy-axis orientation of Co2MnAl from [100] to [ 01 1 over bar ] direction. The remanent magnetization states and coercivity of the Co2MnAl film vary significantly and asymmetrically with the applied voltage due to anisotropic strain originating from PMN-PT. Electrical control of magnetic anisotropy in a Co2MnAl Heusler compound at room temperature will be of interest for realizing next-generation magnetoelectric random access memory devices. Published under an exclusive license by AIP Publishing.en
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK)
dc.description.sponsorship[118M193]
dc.description.urihttps://doi.org/10.1063/5.0097912
dc.identifier.doi10.1063/5.0097912
dc.identifier.eissn1089-7550
dc.identifier.issn0021-8979
dc.identifier.issue10
dc.identifier.urihttps://hdl.handle.net/20.500.14981/63548
dc.identifier.volume132
dc.identifier.wos000858970000007
dc.language.isoeng
dc.publisherAIP Publishing
dc.relation.ispartofJOURNAL OF APPLIED PHYSICS
dc.subjectHEUSLER
dc.subjectCOMPOSITES
dc.subjectBEHAVIOR
dc.subjectPROGRESS
dc.subjectPhysics
dc.titleManipulation of magnetic anisotropy by voltage induced strain in Co2MnAl/PMN-PT heterostructure
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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