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Light-emitting properties of BN synthesized by different techniques

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dc.contributor.authorRudko, G. Yu
dc.contributor.authorSartinska, L. L.
dc.contributor.authorIsaieva, O. F.
dc.contributor.authorGule, E. G.
dc.contributor.authorEren, T.
dc.contributor.authorAltay, E.
dc.date.accessioned2026-06-27T14:26:06Z
dc.date.issued2020
dc.description.abstractLight-emitting properties of boron nitride powders of different morphology grown using various techniques have been studied. All samples were hexagonal BN (h-BN), while the content of impurity phases varied considerably. The wide photoluminescence band in the visible range has been observed. h-BN synthesized using carbothermal reduction method exhibited the highest efficiency of the photoluminescence emission. The intensity of BN emission has been interpreted in terms of interplay between the emission of intrinsic defects stabilized by carbon, carbon-related recombination centers and the centers of non-radiative recombination caused by the presence of sassolite phases in the samples.en
dc.description.sponsorshipNAS of Ukraine [0116U002611]
dc.description.urihttps://doi.org/10.15407/spqeo23.02.193
dc.identifier.doi10.15407/spqeo23.02.193
dc.identifier.eissn1605-6582
dc.identifier.endpage200
dc.identifier.issn1560-8034
dc.identifier.issue2
dc.identifier.startpage193
dc.identifier.urihttps://hdl.handle.net/20.500.14981/60588
dc.identifier.volume23
dc.identifier.wos000573402300012
dc.language.isoeng
dc.publisherNATL ACAD SCIENCES UKRAINE, INST SEMICONDUCTOR PHYSICS
dc.relation.ispartofSEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS
dc.rightsopenAccess
dc.subjectboron nitride
dc.subjectnanostructures
dc.subjectXRD
dc.subjectSEM
dc.subjectphotoluminescence
dc.subjectHEXAGONAL BORON-NITRIDE
dc.subjectLUMINESCENCE PROPERTIES
dc.subjectBCNO
dc.subjectNANOTUBES
dc.subjectSPECTROSCOPY
dc.subjectCARBON
dc.subjectPhysics
dc.titleLight-emitting properties of BN synthesized by different techniques
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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