Yayın:
Copper diffusion in ZnS thin films

Basit öğe sayfası
dc.contributor.authorBacaksiz, E
dc.contributor.authorDzhafarov, TD
dc.contributor.authorNovruzov, VD
dc.contributor.authorÖztürk, K
dc.contributor.authorTomakin, M
dc.contributor.authorKüçükömeroglu, T
dc.contributor.authorAltunbas, M
dc.contributor.authorYanmaz, E
dc.contributor.authorAbay, B
dc.date.accessioned2026-06-27T12:59:53Z
dc.date.issued2004
dc.description.abstractDiffusion of Cu in ZnS thin films was investigated in the temperature range 80-400degreesC using the energy-dispersive X-ray fluorescence (EDXRF) technique. ZnS thin films were deposited by spray pyrolysis on a glass substrate. The temperature dependence of the Cu diffusion coefficient is described by the equation D = 1.4 x 10(-10) exp [-(0.18 eV)/kT]. It is shown that diffusion doping of n-type ZnS by Cu is accompanied by a significant increase in resistivity and a slight decrease in the band gap of the ZnS films. The observed results are attributed to the migration of Cu in polycrystalline ZnS films by means of diffusion both along grain boundaries and into grains. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.urihttps://doi.org/10.1002/pssa.200306853
dc.identifier.doi10.1002/pssa.200306853
dc.identifier.eissn1862-6319
dc.identifier.endpage2952
dc.identifier.issn1862-6300
dc.identifier.issue13
dc.identifier.startpage2948
dc.identifier.urihttps://hdl.handle.net/20.500.14981/48760
dc.identifier.volume201
dc.identifier.wos000224905200016
dc.language.isoeng
dc.publisherWILEY-V C H VERLAG GMBH
dc.relation.ispartofPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
dc.subjectOPTICAL-PROPERTIES
dc.subjectCU
dc.subjectCDS
dc.subjectMaterials Science
dc.subjectPhysics
dc.titleCopper diffusion in ZnS thin films
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

Dosyalar

Koleksiyonlar

Yayınlar