Yayın:
Electrical Characterization of Sol-Gel Derived TiO2 Film on c-Si Substrate by Admittance Measurement

Basit öğe sayfası
dc.contributor.authorSaatci, Ayse Evrim
dc.contributor.authorOzdemir, Orhan
dc.date.accessioned2026-06-27T13:28:55Z
dc.date.issued2014
dc.description.abstractTransport and storage properties of sol-gel synthesized, namely, dip coating technique, titanium dioxide (TiO2) thin film over crystalline silicon (c-Si), has been investigated by means of current-voltage (I-V) and admittance analysis within different ambient. Considering the work function of anatase TiO2 film, determined by both FTIR and TG/DTA analysis, silver (Ag) as front metal electrode was chosen to hinder a barrier for charge carriers. Electrical analysis implied that Ag/TiO2/c-Si structure was actually constituted by Ag/TiO2/native silicon dioxide (SiO2)/c-Si [SIS] structure, in which SiO2 layer was identified by FTIR analysis. Consequently, the electrical features of the film were interpreted in terms of SIS diode that is capable of explaining C-V features.en
dc.description.sponsorshipYildiz Technical University [BAP 2011-01-01-KAP03, DOP 2012-01-01-DOP04]
dc.description.urihttps://doi.org/10.1155/2014/458478
dc.identifier.doi10.1155/2014/458478
dc.identifier.eissn1687-8442
dc.identifier.issn1687-8434
dc.identifier.urihttps://hdl.handle.net/20.500.14981/53093
dc.identifier.volume2014
dc.identifier.wos000342021600001
dc.language.isoeng
dc.publisherHINDAWI LTD
dc.relation.ispartofADVANCES IN MATERIALS SCIENCE AND ENGINEERING
dc.rightsopenAccess
dc.subjectTHIN-FILMS
dc.subjectOPTICAL-PROPERTIES
dc.subjectMaterials Science
dc.titleElectrical Characterization of Sol-Gel Derived TiO2 Film on c-Si Substrate by Admittance Measurement
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

Dosyalar

Koleksiyonlar

Yayınlar