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Electrical transport mechanism in boron nitride thin film

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dc.contributor.authorOzdemir, Orhan
dc.contributor.authorAnutgan, Mustafa
dc.contributor.authorAliyeva-Anutgan, Tamila
dc.contributor.authorAtilgan, Ismail
dc.contributor.authorKatircioglu, Bayram
dc.date.accessioned2026-06-27T13:09:25Z
dc.date.issued2009
dc.description.abstractBoth dc and ac transport characteristics of plasma enhanced chemical vapor deposited (PECVD) boron nitride (BN) thin film was investigated by dc current vs. dc voltage measurement at different temperatures and admittance vs. gate voltage at various frequencies/temperatures, respectively. MIM metal (Al)-insulator (BN)-metal (Al) or MIS metal (Al)-BN-semiconductor (p-Silicon) test devices were conventionally produced. Both conductivity anisotropy and dc/ac detailed transport mechanism were analyzed within the frame of a turbostratic structure (t-BN), interfacing the substrate by a thin amorphous layer (a-BN). This defective BN film has been justified by both infrared (IR) analysis and indirectly by the resulting electrical transport behavior. Transport and its Variations as a function of temperature/frequency are in agreement with a hopping mechanism across Gauss-like energy distributed localized deep traps. (C) 2009 Elsevier B.V. All rights reserved.en
dc.description.urihttps://doi.org/10.1016/j.jnoncrysol.2009.04.034
dc.identifier.doi10.1016/j.jnoncrysol.2009.04.034
dc.identifier.eissn1873-4812
dc.identifier.endpage859
dc.identifier.issn0022-3093
dc.identifier.issue14-15
dc.identifier.startpage851
dc.identifier.urihttps://hdl.handle.net/20.500.14981/50506
dc.identifier.volume355
dc.identifier.wos000266742900007
dc.language.isoeng
dc.publisherELSEVIER
dc.relation.ispartofJOURNAL OF NON-CRYSTALLINE SOLIDS
dc.subjectAlloys
dc.subjectIII-V semiconductors
dc.subjectHeterojunctions
dc.subjectBand structure
dc.subjectConductivity
dc.subjectDefects
dc.subjectFTIR measurements
dc.subjectCHARGE-TRANSPORT
dc.subjectBAND-STRUCTURE
dc.subjectHOPPING MODEL
dc.subjectENERGY
dc.subjectMaterials Science
dc.titleElectrical transport mechanism in boron nitride thin film
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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