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Discrimination of Carrier Conduction Mechanisms of InP/InGaAsP/InAs/InP Laser Structure Through J-V-T Measurements

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dc.contributor.authorAyarci, Neslihan
dc.contributor.authorOzdemir, Orhan
dc.contributor.authorBozkurt, Kutsal
dc.contributor.authorRamdane, Abderrahim
dc.contributor.authorBelahsene, Sofiane
dc.contributor.authorMartinez, Anthony
dc.date.accessioned2026-06-27T13:47:26Z
dc.date.issued2016
dc.description.abstractThe properties of InP/InGaAsP/InAs/InP laser structure, mainly used in the fiber optic telecommunication industry, were investigated through current density-voltage-temperature (J-V-T) measurement within dark and light conditions. Tunneling and generation-recombination carrier conduction mechanisms were identified within a junction bias voltage of 0-0.6 V. Above 0.6 V, Poole-Frenkel was the actual path in conduction and the mobility of carrier was determined quantitatively by means of temperature-dependent J-V curves in the space charge bias region. A thermal energy gap of 0.8 eV corresponded to the band gap of quantum dashes in which radiative recombination took place to emit a laser light at 1550 nm.en
dc.description.urihttps://doi.org/10.1109/ted.2016.2545411
dc.identifier.doi10.1109/ted.2016.2545411
dc.identifier.eissn1557-9646
dc.identifier.endpage1870
dc.identifier.issn0018-9383
dc.identifier.issue5
dc.identifier.startpage1866
dc.identifier.urihttps://hdl.handle.net/20.500.14981/54849
dc.identifier.volume63
dc.identifier.wos000375004500010
dc.language.isoeng
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.relation.ispartofIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.subjectCharge carrier mobility
dc.subjectcurrent density-voltage characteristics
dc.subjectp-i-n diodes
dc.subjectEngineering
dc.subjectPhysics
dc.titleDiscrimination of Carrier Conduction Mechanisms of InP/InGaAsP/InAs/InP Laser Structure Through J-V-T Measurements
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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