Yayın:
I-V Characterization of the Irradiated ZnO:Al Thin Film on P-Si Wafers By Reactor Neutrons

Basit öğe sayfası
dc.contributor.authorGunaydin, Emrah
dc.contributor.authorMatur, Utku Canci
dc.contributor.authorBaydogan, Nilgun
dc.contributor.authorTugrul, A. Beril
dc.contributor.authorCimenoglu, Huseyin
dc.contributor.authorYesilkaya, Serco Serkis
dc.date.accessioned2026-06-27T13:55:20Z
dc.date.issued2015
dc.description.abstractZnO:Al/p-Si heterojunctions were fabricated by solgel dip coating technique onto p-type Si wafer substrates. Al-doped zinc oxide (ZnO:Al) thin film on p-Si wafer was irradiated by reactor neutrons at ITU TRIGA Mark-II nuclear reactor. Neutron irradiation was performed with neutron/gamma ratio at 1.44 x 10(4) (n cm(-2) s(-1) mR(-1)). The effect of neutron irradiation on the electrical characteristics of the ZnO: Al thin film was evaluated by means of current-voltage (I-V) characteristics for the unirradiated and the irradiated states. For this purpose, the changes of I-V characteristics of the unirradiated ZnO: Al thin films were compared with the irradiated ZnO: Al by reactor neutrons. The irradiated thin ZnO: Al film cell structure is appropriate for the usage of solar cell material which is promising energy material.en
dc.description.urihttps://doi.org/10.1007/978-3-319-16024-5_16
dc.identifier.doi10.1007/978-3-319-16024-5_16
dc.identifier.endpage178
dc.identifier.isbn978-3-319-16024-5; 978-3-319-16023-8
dc.identifier.startpage171
dc.identifier.urihttps://hdl.handle.net/20.500.14981/55741
dc.identifier.wos000380565300016
dc.language.isoeng
dc.publisherSPRINGER INT PUBLISHING AG
dc.relation.conferenceInternational Conference on Energy and Management
dc.relation.ispartofEnergy Systems and Management
dc.subjectEnergy & Fuels
dc.titleI-V Characterization of the Irradiated ZnO:Al Thin Film on P-Si Wafers By Reactor Neutrons
dc.typeProceedings Paper
dspace.entity.typePublication
local.import.sourceWOS

Dosyalar

Koleksiyonlar

Yayınlar