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Effect of ion beam modifications on the surface and structural properties of β-FeSi2 thin films

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dc.contributor.authorTatar, Beyhan
dc.contributor.authorKutlu, Kubilay
dc.contributor.authorRuergen, Mustafa
dc.date.accessioned2026-06-27T13:05:36Z
dc.date.issued2007
dc.description.abstractWe have investigated the effect of ion bombardment during and after deposition on the structure and surface properties of semiconducting beta-FeSi2 thin films grown on n-Si( 1 0 0) substrates at room temperature by unbalanced magnetron sputtering. The properties of beta-FeSi2 thin films were characterized with field emission gun scanning electron microscopy, atomic force microscopy, x-ray diffraction analysis and Raman spectroscopy. Ion bombardment of the films after deposition resulted in grain size refinement and decreased the crystallinity of the films. However, ion bombardment during deposition increased the crystallinity and grain size of the coatings. These modifications induced by ion bombardment are also expected to affect the photovoltaic performance.en
dc.description.urihttps://doi.org/10.1088/0022-3727/40/19/032
dc.identifier.doi10.1088/0022-3727/40/19/032
dc.identifier.endpage5999
dc.identifier.issn0022-3727
dc.identifier.issue19
dc.identifier.startpage5995
dc.identifier.urihttps://hdl.handle.net/20.500.14981/49614
dc.identifier.volume40
dc.identifier.wos000250604000033
dc.language.isoeng
dc.publisherIOP PUBLISHING LTD
dc.relation.ispartofJOURNAL OF PHYSICS D-APPLIED PHYSICS
dc.subjectDEPOSITION
dc.subjectSILICON
dc.subjectSI(111)
dc.subjectFESI2
dc.subjectTEMPERATURE
dc.subjectEPITAXY
dc.subjectGROWTH
dc.subjectFE
dc.subjectSI
dc.subjectPhysics
dc.titleEffect of ion beam modifications on the surface and structural properties of β-FeSi2 thin films
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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