Yayın:
Close oxygen coupled low-pressure chemical vapor deposition growth of high quality β - Ga2O3 on sapphire

Basit öğe sayfası
dc.contributor.authorAkyol, Fatih
dc.contributor.authorDemir, Ilkay
dc.date.accessioned2026-06-27T14:44:47Z
dc.date.issued2022
dc.description.abstractWe report on the close oxygen coupled low-pressure chemical vapor deposition (COC-LPCVD) hetero-epitaxial growth of atomically smooth (-201) oriented beta-Ga2O3 on c-plane sapphire. Utilizing a dedicated line within the main tube, O-2 could be delivered to the substrate surface which enables effective control of growth regime. Under optimized conditions (Ga-rich and near stoichiometric feed rate), step flow growth was obtained with X-ray rocking curve full-width at half maximum of 0.09 degrees and 0.20 degrees at a growth rate of 0.49 mu m/h and 3.42 mu m/h, respectively. On the other hand, oxygen-rich growth at high growth rates produced in-plane rotational domains. In addition, the alignment of single crystal (-201) beta-Ga2O3 with respect to the sapphire offcut direction was revealed such that [-20-1] beta-Ga2O3 is along [11-20] (offcut direction) sapphire. This study demonstrates the potential of the versatile COC-LPCVD system on the thin film growth of high quality beta-Ga2O3.en
dc.description.urihttps://doi.org/10.1016/j.mssp.2022.106645
dc.identifier.doi10.1016/j.mssp.2022.106645
dc.identifier.eissn1873-4081
dc.identifier.issn1369-8001
dc.identifier.urihttps://hdl.handle.net/20.500.14981/64246
dc.identifier.volume146
dc.identifier.wos000791698100004
dc.language.isoeng
dc.publisherELSEVIER SCI LTD
dc.relation.ispartofMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
dc.subjectBETA-GA2O3
dc.subjectEngineering
dc.subjectMaterials Science
dc.subjectPhysics
dc.titleClose oxygen coupled low-pressure chemical vapor deposition growth of high quality β - Ga2O3 on sapphire
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

Dosyalar

Koleksiyonlar

Yayınlar