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Observation of apparent MOS regimes on Al/PECVD grown boron nitride/p-c-Si/Al MIS structure, investigated through admittance spectroscopy

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dc.contributor.authorOzdemir, Orhan
dc.date.accessioned2026-06-27T13:07:44Z
dc.date.issued2009
dc.description.abstractPECVD grown boron nitride (BN) on crystalline silicon (c-Si) semiconductor was investigated by admittance measurement in the form of metal/insulator/semiconductor (MIS) structure. Apart from well-known regimes of traditional MOS structure, gradual bypassing of depletion layer was observed once ambient temperature (frequency) increased (decreased). Such an anomalous behavior was interpreted through modulations of charges located within BN film and/or at the interfacial layer of BN film/c-Si junction in terms of weighted average concept. (C) 2008 International Association for Hydrogen Energy. Published by Elsevier Ltd. All rights reserved.en
dc.description.sponsorshipYildiz Technical University [BAPK-28-01-01-02]
dc.description.urihttps://doi.org/10.1016/j.ijhydene.2008.11.071
dc.identifier.doi10.1016/j.ijhydene.2008.11.071
dc.identifier.eissn1879-3487
dc.identifier.endpage1471
dc.identifier.issn0360-3199
dc.identifier.issue3
dc.identifier.startpage1468
dc.identifier.urihttps://hdl.handle.net/20.500.14981/50123
dc.identifier.volume34
dc.identifier.wos000263666000040
dc.language.isoeng
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.relation.ispartofINTERNATIONAL JOURNAL OF HYDROGEN ENERGY
dc.subjectBoron nitride
dc.subjectApparent MOS regimes
dc.subjectSurface band bending
dc.subjectChemistry
dc.subjectElectrochemistry
dc.subjectEnergy & Fuels
dc.titleObservation of apparent MOS regimes on Al/PECVD grown boron nitride/p-c-Si/Al MIS structure, investigated through admittance spectroscopy
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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