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Structural, spectroscopic and passivation properties of a novel binuclear clamshell-type zinc(II) phthalocyanine as gate dielectric for OFET

dc.contributor.authorBuyukeksi, Sebile Isik
dc.contributor.authorAltindal, Ahmet
dc.contributor.authorAcar, Nursel
dc.contributor.authorSengul, Abdurrahman
dc.date.accessioned2026-06-27T14:12:41Z
dc.date.issued2018
dc.description.abstractA novel clamshell-type binuclear zinc(II) phthalocyanine (2) was synthesized by cross condensation of the bisphthalonitrile (1) with 4-tert-butylphthalonitrile and zinc acetate in 1:10:4 ratio. The structure of the novel compound was characterized by elemental analysis, UV-vis, FT-IR (ATR), HR MALDI-TOF mass, H-1 NMR, C-13 DEPT NMR and H-1-H-1 COSY NMR methods. Applying electronic absorption spectroscopy and density functional theory (DFT) revealed that in THF the geometry of 2 is twisted to adopt an intermediate clamshell conformation in which the spacing between the Zn centers is about 8.1 angstrom, providing a very good account of the observed spectrum exhibiting the characteristic B (Soret) band at 347 nm and the Q band at 673 nm. In solution, 2 was found to exist in non-aggregated form. The calculated fluorescence quantum yields (Phi(F) = 0.23 in THF and 0.10 in DMF) were relatively reduced in comparison to that of std ZnPc. In particular, understanding of leakage current conduction mechanisms in gate dielectrics is crucial for the development of field effect transistors with improved device performance. Analysis of the reverse bias current-voltage data indicated that the origin of leakage current conduction mechanisms in clamshell-type zinc(II) phthalocyanine is Poole-Frenkel emission. The capacitance density of 12.7 nF cm(-2) at 5 Hz. and 12.1 nF cm(-2) at 13 MHz was obtained with the FTO/Pc/Au sandwich structure.en
dc.description.sponsorshipBulent Ecevit University [2015-72118496-05]
dc.description.urihttps://doi.org/10.1142/s1088424618500013
dc.identifier.doi10.1142/s1088424618500013
dc.identifier.eissn1099-1409
dc.identifier.endpage76
dc.identifier.issn1088-4246
dc.identifier.issue1-3
dc.identifier.startpage64
dc.identifier.urihttps://hdl.handle.net/20.500.14981/57999
dc.identifier.volume22
dc.identifier.wos000427932100008
dc.language.isoeng
dc.publisherWORLD SCIENTIFIC PUBL CO PTE LTD
dc.relation.ispartofJOURNAL OF PORPHYRINS AND PHTHALOCYANINES
dc.rightsopenAccess
dc.subjectclamshell
dc.subjectOFET
dc.subjectleakage current
dc.subjectcapacitance density
dc.subjectDFT
dc.subjectphthalocyanine
dc.subjectFIELD-EFFECT TRANSISTORS
dc.subjectTHIN-FILM TRANSISTORS
dc.subjectPHOTOCHEMICAL PROPERTIES
dc.subjectMETAL-FREE
dc.subjectBALL
dc.subjectELECTROCHEMISTRY
dc.subjectPERFORMANCE
dc.subjectSOLVENT
dc.subjectLAYER
dc.subjectChemistry
dc.titleStructural, spectroscopic and passivation properties of a novel binuclear clamshell-type zinc(II) phthalocyanine as gate dielectric for OFET
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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