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Large single-crystal growth and characterization of the narrow-gap semiconductor TlBiS2

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dc.contributor.authorOzer, M
dc.contributor.authorParaskevopoulos, KM
dc.contributor.authorAnagnostopoulos, AN
dc.contributor.authorKokou, S
dc.contributor.authorPolychroniadis, EK
dc.date.accessioned2026-06-27T12:58:46Z
dc.date.issued1996
dc.description.abstractTlBiS2 is a narrow-gap semiconductor with a layered structure, isoelectronically analogous to PbS. Large single crystals were grown by the Bridgman-Stockbarger method from the melt and characterized by x-ray diffraction. The lattice parameters were determined and the discrepancy between those already reported was removed. From IR reflectivity measurements in the plasma region, the number of carriers was calculated. Also a strong anisotropy of the electrical conductivity was detected and the narrow-gap character of the material was supported by electrical measurements in the range of 10-300 K.en
dc.description.urihttps://doi.org/10.1088/0268-1242/11/10/009
dc.identifier.doi10.1088/0268-1242/11/10/009
dc.identifier.endpage1410
dc.identifier.issn0268-1242
dc.identifier.issue10
dc.identifier.startpage1405
dc.identifier.urihttps://hdl.handle.net/20.500.14981/48476
dc.identifier.volume11
dc.identifier.wosA1996VU74700006
dc.language.isoeng
dc.publisherIOP PUBLISHING LTD
dc.relation.ispartofSEMICONDUCTOR SCIENCE AND TECHNOLOGY
dc.subjectTIBISE2
dc.subjectEngineering
dc.subjectMaterials Science
dc.subjectPhysics
dc.titleLarge single-crystal growth and characterization of the narrow-gap semiconductor TlBiS2
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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