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Structural and interfacial properties of large area n-a-Si:H/i-a-Si:H/p-c-Si heterojunction solar cells

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dc.contributor.authorPehlivan, Ozlem
dc.contributor.authorMenda, Deneb
dc.contributor.authorYilmaz, Okan
dc.contributor.authorKodolbas, Alp Osman
dc.contributor.authorOzdemir, Orhan
dc.contributor.authorDuygulu, Ozgur
dc.contributor.authorKutlu, Kubilay
dc.contributor.authorTomak, Mehmet
dc.date.accessioned2026-06-27T13:31:43Z
dc.date.issued2014
dc.description.abstractGrowth of hydrogenated amorphous silicon in a doping inversed silicon heterojunction solar cell (n-a-Si:H/i-a-Si:H/p-c-Si) interface was investigated by High Resolution Transmission Electron Microscopy (HR-TEM), Spectroscopic Ellipsometry (SE), Fourier Transform Infrared Attenuated Total Reflection spectroscopy (FTIR-ATR) and current-voltage (I-V) measurements. Effective Medium Approximation (EMA) to the SE was used to describe breakage of epi-Si and evolution of mixture of microcrystalline and amorphous phases. Fabricated silicon heterojunction solar cells were characterized by dark and light I-V measurements at Standard Test Conditions. By improving the cleaning and deposition conditions, solar cells with 9.2% efficiency over 72 cm(2) total active area were obtained on p-type c-Si wafers. (C) 2014 Elsevier Ltd. All rights reserved.en
dc.description.sponsorshipYildiz Technical University Project [2012-01-01-KAP02, 2012-01-01-DOP03]
dc.description.sponsorshipScientific and Technological Research Council of Turkey Project [108T016]
dc.description.urihttps://doi.org/10.1016/j.mssp.2014.02.002
dc.identifier.doi10.1016/j.mssp.2014.02.002
dc.identifier.eissn1873-4081
dc.identifier.endpage75
dc.identifier.issn1369-8001
dc.identifier.startpage69
dc.identifier.urihttps://hdl.handle.net/20.500.14981/53580
dc.identifier.volume22
dc.identifier.wos000334087200011
dc.language.isoeng
dc.publisherELSEVIER SCI LTD
dc.relation.ispartofMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
dc.subjectDoping inversed large area silicon heterojunction (SHJ)
dc.subjectTEM
dc.subjectSE
dc.subjectEpi-layer
dc.subjectOPTICAL-PROPERTIES
dc.subjectSPECTROSCOPIC ELLIPSOMETRY
dc.subjectFABRICATION
dc.subjectEngineering
dc.subjectMaterials Science
dc.subjectPhysics
dc.titleStructural and interfacial properties of large area n-a-Si:H/i-a-Si:H/p-c-Si heterojunction solar cells
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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