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A proposal for an alternative class of spin filter materials: Hybridization-induced high-TC ferromagnetic semiconductors CoVXAl (X = Ti, Zr, Hf)

dc.contributor.authorGalanakis, I.
dc.contributor.authorOzdogan, K.
dc.contributor.authorSasioglu, E.
dc.date.accessioned2026-06-27T13:24:13Z
dc.date.issued2013
dc.description.abstractUsing ab-initio electronic structure calculations, we propose an alternative class of spin filter materials (SFMs) based on the quaternary Heusler compounds CoVXAl (X Ti, Zr, Hf). We show that the p-d hybridization leads to the formation of the ferromagnetic band gap with a moderate exchange splitting Delta E-ex and a Curie temperature T-C well above the room temperature. We find that all three compounds are thermodynamically and magnetically stable. Combination of high T-C value together with moderate exchange splitting, as well as crystal structures compatible to the existing semiconductors and metals, makes these compounds promising candidates to find applications as SFMs in spintronics devices. (C) 2013 AIP Publishing LLC.en
dc.description.urihttps://doi.org/10.1063/1.4823820
dc.identifier.doi10.1063/1.4823820
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.issue14
dc.identifier.urihttps://hdl.handle.net/20.500.14981/52688
dc.identifier.volume103
dc.identifier.wos000325488500053
dc.language.isoeng
dc.publisherAMER INST PHYSICS
dc.relation.ispartofAPPLIED PHYSICS LETTERS
dc.subjectPhysics
dc.titleA proposal for an alternative class of spin filter materials: Hybridization-induced high-TC ferromagnetic semiconductors CoVXAl (X = Ti, Zr, Hf)
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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