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Comparing Different Switching Techniques For Silicon Carbide MOSFET Assisted Silicon IGBT Based Hybrid Switch

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dc.contributor.authorOzdemir, Sadik
dc.contributor.authorAcar, Fatih
dc.contributor.authorSelamogullari, Ugur S.
dc.date.accessioned2026-06-27T13:53:17Z
dc.date.issued2015
dc.description.abstractThis study compares different switching techniques for Silicon Carbide (SiC) MOSFET assisted Silicon (Si) IGBT based hybrid switch and presents the effect of hybrid switch control techniques on the efficiency improvement. The hybrid switch which parallels a IGBT with a SiC MOSFET is proposed as a solution to improve the light load efficiency. The hybrid switch combines desirable properties both IGBT and SiC MOSFET. Different operation modes of hybrid switch are analyzed in PSIM using a simple circuit and it is shown that the hybrid switch performs better compared to IGBT alone operation.en
dc.identifier.endpage481
dc.identifier.isbn978-1-4673-7239-8
dc.identifier.startpage476
dc.identifier.urihttps://hdl.handle.net/20.500.14981/55314
dc.identifier.wos000382957000074
dc.language.isoeng
dc.publisherIEEE
dc.relation.conferenceInt Aegean Conference on Electrical Machines and Power Electronics (ACEMP) / Int Conference on Optimization of Electrical and Electronic Equipment (OPTIM) / Int Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION)
dc.relation.ispartof2015 INTL AEGEAN CONFERENCE ON ELECTRICAL MACHINES & POWER ELECTRONICS (ACEMP), 2015 INTL CONFERENCE ON OPTIMIZATION OF ELECTRICAL & ELECTRONIC EQUIPMENT (OPTIM) & 2015 INTL SYMPOSIUM ON ADVANCED ELECTROMECHANICAL MOTION SYSTEMS (ELECTROMOTION)
dc.subjectLight load efficiency
dc.subjecthybrid switch
dc.subjectsynchronous rectification
dc.subjectEngineering
dc.titleComparing Different Switching Techniques For Silicon Carbide MOSFET Assisted Silicon IGBT Based Hybrid Switch
dc.typeProceedings Paper
dspace.entity.typePublication
local.import.sourceWOS

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