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Comparing Different Switching Techniques For Silicon Carbide MOSFET Assisted Silicon IGBT Based Hybrid Switch

dc.contributor.authorOzdemir, Sadik
dc.contributor.authorAcar, Fatih
dc.contributor.authorSelamogullari, Ugur S.
dc.date.accessioned2026-06-27T13:53:44Z
dc.date.issued2015
dc.description.abstractThis study compares different switching techniques for Silicon Carbide (SiC) MOSFET assisted Silicon (Si) IGBT based hybrid switch and presents the effect of hybrid switch control techniques on the efficiency improvement. The hybrid switch which parallels a IGBT with a SiC MOSFET is proposed as a solution to improve the light load efficiency. The hybrid switch combines desirable properties both IGBT and SiC MOSFET. Different operation modes of hybrid switch are analyzed in PSIM using a simple circuit and it is shown that the hybrid switch performs better compared to IGBT alone operation.en
dc.identifier.endpage561
dc.identifier.isbn978-1-4673-7319-7
dc.identifier.startpage558
dc.identifier.urihttps://hdl.handle.net/20.500.14981/55401
dc.identifier.wos000380467800103
dc.language.isoeng
dc.publisherIEEE
dc.relation.conference5th International Conference on Electrical Engineering and Informatics
dc.relation.ispartof5TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING AND INFORMATICS 2015
dc.subjectLight load efficiency
dc.subjecthybrid switch
dc.subjectsynchronous rectification
dc.subjectINVERTER
dc.subjectComputer Science
dc.subjectEngineering
dc.titleComparing Different Switching Techniques For Silicon Carbide MOSFET Assisted Silicon IGBT Based Hybrid Switch
dc.typeProceedings Paper
dspace.entity.typePublication
local.import.sourceWOS

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