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Dynamic frequency switching of a bandstop reconfigurable frequency selective surface with PIN diodes for C/X and Ku-band shielding applications

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ELSEVIER GMBH

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10.1016/j.aeue.2024.155402

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This paper presents a reconfigurable bandstop frequency selective surface (R-FSS) design capable of switching across C, X and Ku -bands. The electronic switching mechanism is achieved in real-time through PIN diodes. The combination of rectangular loops is selected as unit -cell and PIN diodes are strategically placed to dynamically adjust the bandstop region. The device operates in three distinct modes corresponding to the activation status of the PIN -diodes. For TE polarization, Mode 1 encompasses the Ku-bandstop (12.64 -14.75 GHz), Mode 2 corresponds to the C/X-bandstop (6.62 -11.28 GHz), and Mode 3 involves the X-bandstop (9.82 -11.63 GHz), whereas X-bandstop characteristic is observed for TM polarization (9.054 ---11.29 GHz). In TE polarization, each configuration is defined by specific equivalent circuit models, featuring an inductance in parallel with series L -C resonant circuit, an L -C resonant circuit in parallel with the inductance, and two L -C resonant circuits in parallel, respectively. Additionally, for TM polarization, the configuration incorporates two parallel L -C resonant circuits. A prototype of the proposed R-FSS is fabricated and measured. The results demonstrated effective switching operation across the C, X and Ku -band stopbands, depending on the biasing of the PIN diodes. The experimental outcomes are consistent with the simulation results, affirming the compatibility and functionality of the proposed R-FSS design.

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AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS

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1434-8411

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