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Effect of Na doping on the properties of ZnS thin films and ZnS/Si heterojunction cells

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dc.contributor.authorYesilkaya, S. Serkis
dc.contributor.authorUlutas, Unzile
dc.contributor.authorAbd Alqader, Huda M.
dc.date.accessioned2026-06-27T14:32:23Z
dc.date.issued2021
dc.description.abstractUndoped and 1, 5, 10 and 15% sodium doped ZnS thin films were grown on glass and Si substrates by spray pyrolysis. Effect of Na doping on the properties of ZnS thin films were investigated via XRD, SEM, UV-Visible spectrometry and resistivity measurements. Photovoltaic behavior of ZnS/Si heterostructure cells were investigated by current-voltage measurements. Band gap energy of ZnS film was decreased to 3.42 eV from 3.66 eV and resistivity of the film was decreased to 2.00 x 10(5) Omega.cm from 5.17 x 10(5) Omega.cm with increasing Na doping concentration. Photovoltaic performance of ZnS/Si heterostructure cell was improved and power conversion efficiency was increased to 5.06% from 2.20%. (C) 2021 Elsevier B.V. All rights reserved.en
dc.description.urihttps://doi.org/10.1016/j.matlet.2021.129347
dc.identifier.doi10.1016/j.matlet.2021.129347
dc.identifier.eissn1873-4979
dc.identifier.issn0167-577X
dc.identifier.urihttps://hdl.handle.net/20.500.14981/61814
dc.identifier.volume288
dc.identifier.wos000656806100021
dc.language.isoeng
dc.publisherELSEVIER
dc.relation.ispartofMATERIALS LETTERS
dc.subjectZnS
dc.subjectThin films
dc.subjectNa doping
dc.subjectSemiconductors
dc.subjectSPRAY-PYROLYSIS
dc.subjectSI
dc.subjectMaterials Science
dc.subjectPhysics
dc.titleEffect of Na doping on the properties of ZnS thin films and ZnS/Si heterojunction cells
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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