Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy

Abstract

Temperature- and field-dependent electron and hole mobilities were simultaneously derived from admittance measurements on an InP/InGaAsP/InAs/InP long wavelength laser structure. Each carrier's mobility was separated in the frequency domain due to the corresponding different relaxation times from C versus log f curves. Derived electron and hole mobilities followed the Poole-Frenkel-type field dependence, indicating the transport of carriers through hopping. Extracted thermal energy gap (Delta) and disorder temperature (T-0) values were in mutual agreement with previous current density-voltage measurements and from the energy band diagram of the present structure, constructed from other studies in the literature by photoluminescence and photoluminescence excitation experiments.