Yayın:
Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy

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dc.contributor.authorKuruoglu, Neslihan Ayarci
dc.contributor.authorOzdemir, Orhan
dc.contributor.authorBozkurt, Kutsal
dc.contributor.authorBelahsene, Sofiane
dc.contributor.authorMartinez, Anthony
dc.contributor.authorRamdane, Abderrahim
dc.date.accessioned2026-06-27T14:01:54Z
dc.date.issued2017
dc.description.abstractTemperature- and field-dependent electron and hole mobilities were simultaneously derived from admittance measurements on an InP/InGaAsP/InAs/InP long wavelength laser structure. Each carrier's mobility was separated in the frequency domain due to the corresponding different relaxation times from C versus log f curves. Derived electron and hole mobilities followed the Poole-Frenkel-type field dependence, indicating the transport of carriers through hopping. Extracted thermal energy gap (Delta) and disorder temperature (T-0) values were in mutual agreement with previous current density-voltage measurements and from the energy band diagram of the present structure, constructed from other studies in the literature by photoluminescence and photoluminescence excitation experiments.en
dc.description.urihttps://doi.org/10.1109/ted.2017.2705719
dc.identifier.doi10.1109/ted.2017.2705719
dc.identifier.eissn1557-9646
dc.identifier.endpage2885
dc.identifier.issn0018-9383
dc.identifier.issue7
dc.identifier.startpage2881
dc.identifier.urihttps://hdl.handle.net/20.500.14981/56540
dc.identifier.volume64
dc.identifier.wos000403452900016
dc.language.isoeng
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.relation.ispartofIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.subjectCapacitance-voltage characteristics
dc.subjectcharge carrier mobility
dc.subjectp-i-n diodes
dc.subjectVERTICAL CARRIER TRANSPORT
dc.subjectQUANTUM-DOT LASERS
dc.subjectMU-M
dc.subjectTHRESHOLD CURRENT
dc.subjectTEMPERATURE
dc.subjectFIELD
dc.subjectEngineering
dc.subjectPhysics
dc.titleSimultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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