Influence of indium on the parameters of ZnS thin films and ZnS/CuInS2 cells

Abstract

ZnS/CuInS2 heterostructure cells fabricated by chemical spray pyrolysis technique with undoped and 5 to 20% indium doped ZnS layer. Effect of In doping on the parameters of ZnS thin films and ZnS/CuInS2 cells were investigated. Band gap energy of ZnS film was decreased to 3.26 eV from 3.66 eV and resistivity of the film was decreased to 1.80 x 10(5) Omega.cm from 5.20 x 10(5) Omega.cm with increasing In doping concentration. Photovoltaic performance of ZnS/CuInS2 heterostructure cell was improved and power conversion efficiency was increased to 6.02% from 3.90% as a result of increased V-oc, J(sc) and FF.