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Influence of indium on the parameters of ZnS thin films and ZnS/CuInS2 cells

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dc.contributor.authorYesilkaya, S. Serkis
dc.contributor.authorUlutas, Unzile
dc.date.accessioned2026-06-27T14:44:52Z
dc.date.issued2022
dc.description.abstractZnS/CuInS2 heterostructure cells fabricated by chemical spray pyrolysis technique with undoped and 5 to 20% indium doped ZnS layer. Effect of In doping on the parameters of ZnS thin films and ZnS/CuInS2 cells were investigated. Band gap energy of ZnS film was decreased to 3.26 eV from 3.66 eV and resistivity of the film was decreased to 1.80 x 10(5) Omega.cm from 5.20 x 10(5) Omega.cm with increasing In doping concentration. Photovoltaic performance of ZnS/CuInS2 heterostructure cell was improved and power conversion efficiency was increased to 6.02% from 3.90% as a result of increased V-oc, J(sc) and FF.en
dc.description.sponsorshipYldz Technical University Scientific Research Project Coordination Department [2015-01-01-DOP01]
dc.description.urihttps://doi.org/10.1016/j.matlet.2022.131959
dc.identifier.doi10.1016/j.matlet.2022.131959
dc.identifier.eissn1873-4979
dc.identifier.issn0167-577X
dc.identifier.urihttps://hdl.handle.net/20.500.14981/64262
dc.identifier.volume315
dc.identifier.wos000767830300006
dc.language.isoeng
dc.publisherELSEVIER
dc.relation.ispartofMATERIALS LETTERS
dc.subjectCuInS2
dc.subjectZnS
dc.subjectIn doping
dc.subjectSemiconductors
dc.subjectThin films
dc.subjectOPTICAL-PROPERTIES
dc.subjectSPRAY-PYROLYSIS
dc.subjectMaterials Science
dc.subjectPhysics
dc.titleInfluence of indium on the parameters of ZnS thin films and ZnS/CuInS2 cells
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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