Molybdenum Diffusion in CuInSe2 Thin Films

Abstract

Molybdenum diffusion in CuInSe2 (CIS) films was investigated in the temperature range 240-520 C using the energy-dispersive X-ray (EDX) and resistivity techniques. CuInSe2 thin films were deposited by single-source evaporation on glass and molybdenum-covered glass substrates. The temperature dependence of Mo diffusion coefficient is described by equation D=1.3x10-8exp(-0.53/kT). It is shown that the diffusion doping of p-type CIS by molybdenum is accompanied by the significant decrease of resistivity. The observed results of the diffusion and electrical measurements are attributed to migration of Mo in the polycrystalline CIS films by means of both along intergrain surfaces and into grains.