Yayın:
Molybdenum Diffusion in CuInSe2 Thin Films

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dc.contributor.authorDzhafarov, Tayyar
dc.contributor.authorSadigov, Magomed
dc.contributor.authorCingi, Emel
dc.contributor.authorBacaksiz, Emin
dc.contributor.authorCaliskan, Murat
dc.date.accessioned2026-06-27T12:59:50Z
dc.date.issued2000
dc.description.abstractMolybdenum diffusion in CuInSe2 (CIS) films was investigated in the temperature range 240-520 C using the energy-dispersive X-ray (EDX) and resistivity techniques. CuInSe2 thin films were deposited by single-source evaporation on glass and molybdenum-covered glass substrates. The temperature dependence of Mo diffusion coefficient is described by equation D=1.3x10-8exp(-0.53/kT). It is shown that the diffusion doping of p-type CIS by molybdenum is accompanied by the significant decrease of resistivity. The observed results of the diffusion and electrical measurements are attributed to migration of Mo in the polycrystalline CIS films by means of both along intergrain surfaces and into grains.en
dc.description.urihttps://doi.org/10.7567/jjaps.39s1.194
dc.identifier.doi10.7567/jjaps.39s1.194
dc.identifier.eissn1347-4065
dc.identifier.endpage195
dc.identifier.issn0021-4922
dc.identifier.issue1
dc.identifier.startpage194
dc.identifier.urihttps://hdl.handle.net/20.500.14981/48747
dc.identifier.volume39
dc.identifier.wos000209019800068
dc.language.isoeng
dc.publisherIOP PUBLISHING LTD
dc.relation.ispartofJAPANESE JOURNAL OF APPLIED PHYSICS
dc.subjectCuInSe2 films
dc.subjectMo diffusion
dc.subjectelectrical conductivity
dc.subjectPhysics
dc.titleMolybdenum Diffusion in CuInSe2 Thin Films
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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