Yayın: Detailed study on effects of gate voltage, frequency and temperature on dielectric properties of Cu/PAr/n-CdS/SnO2 MIS Schottky diode
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IOP Publishing Ltd
DOI
10.1088/1361-6463/abd80e
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In this paper, CdS based metal-insulator-semiconductor (MIS) diode was fabricated by using the Polyarylate (PAr) film as insulator dielectric on transparent conductive glass substrate. The dielectric parameters such as dielectric constant (epsilon '), loss (epsilon), loss tangent (tan delta), ac conduc-tivity (sigma(AC)) and complex modulus (M '
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JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN
0022-3727