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Detailed study on effects of gate voltage, frequency and temperature on dielectric properties of Cu/PAr/n-CdS/SnO2 MIS Schottky diode

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dc.contributor.authorKuruoglu, Furkan
dc.contributor.authorCaliskan, Murat
dc.contributor.authorYildirim, Saffettin
dc.contributor.authorSerin, Merih
dc.date.accessioned2026-06-27T14:34:25Z
dc.date.issued2021
dc.description.abstractIn this paper, CdS based metal-insulator-semiconductor (MIS) diode was fabricated by using the Polyarylate (PAr) film as insulator dielectric on transparent conductive glass substrate. The dielectric parameters such as dielectric constant (epsilon '), loss (epsilon), loss tangent (tan delta), ac conduc-tivity (sigma(AC)) and complex modulus (M 'en
dc.description.urihttps://doi.org/10.1088/1361-6463/abd80e
dc.identifier.doi10.1088/1361-6463/abd80e
dc.identifier.eissn1361-6463
dc.identifier.issn0022-3727
dc.identifier.issue14
dc.identifier.urihttps://hdl.handle.net/20.500.14981/62236
dc.identifier.volume54
dc.identifier.wos000612953000001
dc.language.isoeng
dc.publisherIOP Publishing Ltd
dc.relation.ispartofJOURNAL OF PHYSICS D-APPLIED PHYSICS
dc.subjectdielectric spectroscopy
dc.subjectpolymer films
dc.subjecthybrid junction
dc.subjectinterface states
dc.subjectsemiconductor thin films
dc.subjectELECTRICAL-PROPERTIES
dc.subjectCONDUCTIVITY
dc.subjectOXIDE
dc.subjectPhysics
dc.titleDetailed study on effects of gate voltage, frequency and temperature on dielectric properties of Cu/PAr/n-CdS/SnO2 MIS Schottky diode
dc.typeArticle
dspace.entity.typePublication
local.import.sourceWOS

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